july 2010 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev.c3 www.fairchildsemi.com 1 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode 30 v, 1.8 a, 299 m features ? max r ds(on) = 299 m at v gs = 4.5 v, i d = 1.6 a ? max r ds(on) = 410 m at v gs = 2.5 v, i d = 1.3 a ? low profile: 0.55 mm maximum in the new package microfet 1.6x1.6 thin ? free from halogenated compounds and antimony oxides ? hbm esd protection level > 1600 v (note 3) ? rohs compliant general description this device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. it features a mosf et with low input capacitance, total gate charge and on-state resistance. an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. the microfet 1.6x1.6 thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. application ? boost functions mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 12 v i d drain current -continuous t a = 25 c (note 1a) 1.8 a -pulsed 4.5 p d power dissipation for single operation t a = 25 c (note 1a) 1.4 w power dissipation for single operation t a = 25 c (note 1b) 0.6 v rrm schottky repetitive peak reverse voltage 28 v i o schottky average forward current 1 a t j , t stg operating and storage junction temperature range (note 4) -55 to +150 c r ja thermal resistance, junction to ambient (single o peration) (note 1a) 90 c/w r ja thermal resistance, junction to ambient (single o peration) (note 1b) 195 r ja thermal resistance, junction to ambient (single o peration) (note 1c) 110 r ja thermal resistance, junction to ambient (single o peration) (note 1d) 234 device marking device package reel size tape width quantity 1t FDFME3N311ZT microfet 1.6x1.6 thin 7?? 8mm 5000 units bottom top g a nc d s k microfet 1.6x1.6 thin k d pin1
www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev . c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics schottky diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 25 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 12 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.511.5v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/c r ds(on) drain to source on resistance v gs = 4.5 v, i d = 1.6 a 235 299 m v gs = 2.5 v, i d = 1.3 a 296 410 v gs = 4.5 v, i d = 1.6 a,t j = 125 c 365 603 g fs forward transconductance v ds = 5 v, i d = 1.6 a 2.8 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 55 75 pf c oss output capacitance 15 20 pf c rss reverse transfer capacitance 7 10 pf r g gate resistance 7.5 t d(on) turn-on delay time v dd = 15 v, i d = 1.6 a, v gs = 4.5 v, r gen = 6 612ns t r rise time 816ns t d(off) turn-off delay time 22 35 ns t f fall time 1.4 10 ns q g total gate charge v gs = 4.5 v, v dd = 15 v, i d = 1.6 a 11.4nc q gs gate to source gate charge 0.2 nc q gd gate to drain ?miller? charge 0.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 0.9 a (note 2) 0.9 1.2 v t rr reverse recovery time i f = 1.6 a, di/dt = 100 a/ s 12 22 ns q rr reverse recovery charge 3.1 10 nc i r reverse leakage v r = 28 v t j = 25 c t j = 85 c 15 100 a 0.46 4.7 ma v f forward voltage i f = 1 a t j = 25 c t j = 85 c 0.47 0.57 v 0.45 v f forward voltage i f = 500 ma t j = 25 c t j = 85 c 0.38 0.48 v 0.33
www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev . c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode electrical characteristics notes: 1. r ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. (a) mosfet r ja = 90 c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick pcb. (b) mosfet r ja = 195 c/w when mounted on a minimum pad of 2 oz copper. (c) schottky r ja = 110 c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick pcb. (d) schottky r ja = 234 c/w when mounted on a minimum pad of 2 oz copper. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection esd. no gate overvoltage rating is implied. 4. rating is applicable to mosfet only. a. 90 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 195 c/w when mounted on a minimum pad of 2 oz copper. c. 110 c/w when mounted on a 1 in 2 pad of 2 oz copper. d. 234 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode typical characteristics t j = 25c unless otherwise noted figure 1. 0123 0 1 2 3 4 v gs = 3.5 v v gs = 4.5 v v gs = 3 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 2.5 v v gs = 1.8 v v gs = 6 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 01234 0.5 1.0 1.5 2.0 2.5 v gs = 4.5 v v gs = 6 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 2.5 v v gs = 1.8 v v gs = 3 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 1.6 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 200 400 600 800 1000 i d = 1.6 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 1 2 3 4 v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode figure 7. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 1.5 3.0 4.5 i d = 1.6 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 4 10 100 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage f i g u r e 9 . f o r w a r d b i a s s a f e op erating area figure 10. gate leakage current vs gate to source voltage figure 11. schottky diode reverse current figure 12. schottky diode forward voltage typical characteristics t j = 25c unless otherwise noted 0 5 10 15 20 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 v ds = 0 v t j = 25 o c t j = 150 o c v gs , gate to source voltage (v) i g , gate leakage current (a) 0.1 1 10 100 0.001 0.01 0.1 1 10 dc 10 s 1 s 100 ms 10 ms 1 ms 100 us i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 195 o c/w t a = 25 o c 0.0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 5 t j = 25 o c t j = 125 o c i f , forward current (a) v f , forward voltage (mv) 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 100 o c t j = 25 o c t j = 125 o c i r , reverse leakage current (ma) v r , reverse voltage (v)
www.fairchildsemi.com 6 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode figure 13. single pulse maximum power dissipation figure 14. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.01 0.1 1 single pulse r t ja = 195 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.1 1 10 100 p (pk) , peak transient power (w) single pulse r t ja = 195 o c/w t a = 25 o c t, pulse width (s)
www.fairchildsemi.com 7 ?2010 fairchild semiconductor corporation FDFME3N311ZT rev . c3 FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode dimensional outline and pad layout
FDFME3N311ZT integrated n-channel powertrench ? mosfet and schottky diode ?2010 fairchild semiconductor corporation 8 www.fairchildsemi.com FDFME3N311ZT rev.c3 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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